SIGC25T60SNC edited by infineon technologies ai ps dd hv3, l 7262 - s , edition 2 , 28.11 .2003 igbt chip in npt - technology this chip is used for: sgp30n60 features: 600v npt technology 100m chip short circuit prove positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die siz e package ordering code sigc25t60sn c 600v 30a 4.5 x 5.71 mm 2 sawn on foil q67041 - a4667 - a001 sigc25t60sn c 600v 30a 4.5 x 5.71 mm 2 unsawn q67041 - a4667 - a002 mechanical parameter: raster size 4.5 x 5.71 area total / active 25.7 / 21.4 emitter pad size 2x( 2.18x1.58 ) gate pad size 0.68 x 1.08 mm 2 thickness 100 m wafer size 150 mm flat position 90 deg max.possible chips per wafer 566 passivation frontside photoimide emitter metallization 3200 nm al si 1% collector metallization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIGC25T60SNC edited by infineon technologies ai ps dd hv3, l 7262 - s , edition 2 , 28.11 .2003 maximum ratings: parameter symbol value unit collector - emitter voltage , t j =25 c v ce 600 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 90 a gate emitter voltage v ge 20 v operating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip), t j = 25 c, unless otherwise specified: value parameter symbol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v, i c =500a 600 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =30a 1.6 2 2.5 gate - emitter threshold voltage v ge(th) i c =700a, v ge =v ce 3 4 5 v zero gate voltage collector current i ces v ce =600v, v ge =0v 2.2 a gate - emitter leakage current i ges v ce =0v, v ge =2 0v 120 na dynamic characteristics (tested at component): value paramete r symbol conditions min. typ. max. unit input capacitance c iss - 1600 1920 output capacitance c oss - 150 180 reverse transfer capacitance c rss v ce =25v v ge =0v f =1mhz - 92 110 pf switching characteristics (tested at component) , inductiv e load: value parameter symbol conditions 2) min. typ. max. unit turn - on delay time t d(on) - 44 53 rise time t r - 34 40 turn - off delay time t d(off) - 324 389 fall time t f t j =150 c v cc =400v i c =30a v ge =+15/0v r g =11 w - 67 80 ns 2) switching c onditions different to 600v standard igbt 2, under comparable switching conditions 40% faster turnoff than standard igbt 2. v alues also influenced by parasitic l - and c - in measurement and package.
SIGC25T60SNC edited by infineon technologies ai ps dd hv3, l 7262 - s , edition 2 , 28.11 .2003 chip drawing:
SIGC25T60SNC edited by infineon technologies ai ps dd hv3, l 7262 - s , edition 2 , 28.11 .2003 further electrical characteristics: this chip data sheet refers to the device data sheet sgp30n60 package :to220 description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld pu blished by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain components and shall not be consi dered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein . infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies represen tatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components m ay only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health o f the user or other persons may be endangered.
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